IET Power Electronics (Feb 2021)

First self‐resonant frequency of power inductors based on approximated corrected stray capacitances

  • Ignacio Lope,
  • Claudio Carretero,
  • Jesus Acero

DOI
https://doi.org/10.1049/pel2.12030
Journal volume & issue
Vol. 14, no. 2
pp. 257 – 267

Abstract

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Abstract Inductive devices are extensively employed in power electronic systems due to their magnetic energy storage and power transfer capabilities. The current trend is towards increasing the frequency of operation in order to reduce the size of the magnetic components, but the main drawback is that the parasitic capacitance effect can become significant, and degrade the performance of the system. This work analyses the influence of this stray capacitance, and considers how to improve the performance of the device. In general, the impact of the stray capacitance on a magnetic component can be reduced by two methods: reducing the parasitic capacitance between turns of the winding or, alternatively, modifying the arrangement of the connection between turns. To evaluate the last option, an approximated expression of the first self‐resonant frequency of the magnetic device is proposed. This gives a rapid assessment of the performance of different devices maintaining the overall equivalent inductance. The proposed expression accounts for the influence of the connection between turns in the bandwidth of the component. Finally, some numerical results are verified with planar coils manufactured on two‐layer printed circuit boards.

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