EPJ Web of Conferences (Jan 2020)

Study of 14N(ρ,γ)15O resonance reaction at Eplab= 278 keV

  • Sharma Sathi,
  • Gupta A.,
  • Das S.,
  • Roy Chowdhury M.,
  • Mandal A.,
  • Bisoi A.,
  • Nanal V,
  • Tribedi L.C.,
  • Sarkar S.,
  • Saha Sarkar M.

DOI
https://doi.org/10.1051/epjconf/202022702011
Journal volume & issue
Vol. 227
p. 02011

Abstract

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An implanted target (14N on Ta) is prepared and characterized via surface and bulk characterization processes. The depth profile of the implanted ions is obtained experimentally by populating a narrow resonance state of 15O through 14N(ρ,γ) reaction induced with a laboratory proton energy of 278 keV. The experimental profile is then compared with devoted simulations to under- stand the locations of the implantated ions in the lattice structure. Later, the lifetimes of a few excited states of 15O, relevant for applications in astrophys- ical scenario, have been determined using Doppler Shift Attenuation Method(DSAM).