Damage of γ ray irradiation to properties of Ce doped bismuth titanate ferroelectric thin films

Abstract

A series of ferroelectric thin films of Bi3.25Ce0.75Ti3O12 (BCTO) was deposited on a composite substrate of Pt/Ti/SiO2/Si through the sol-gel method, and the deposited films were irradiated with different doses of gamma rays. The crystal structure, surface morphology, ferroelectricity, leakage, and anti-fatigue properties of the deposited films before and after irradiation were compared by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), scanning electron microscope-energy dispersive spectrometer (SEM-EDS) and ferroelectric tester. The results showed that an increase in absorbed γ ray doses, didn't change the crystal structure of films. The ferroelectricity of the deposited films decreased significantly with the residual polarization 2Pr decreasing from 51.5 μC/cm2 to 23.7 μC/cm2. The leakage current density of the films increased slightly from 0.9×10-7 A/cm2 to 7.2×10-7 A/cm2. Some of the films showed fatigue performance after 1012 polarization switching cycles.

Keywords

• gamma ray
• bi3.25ce0.75ti3o12 ferroelectric thin films
• ferroelectricity
• leakage current
• fatigue performance