An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Shun-Chang Liu; Chen-Min Dai; Yimeng Min; Yi Hou; Andrew H. Proppe; Ying Zhou; Chao Chen; Shiyou Chen; Jiang Tang; Ding-Jiang Xue; Edward H. Sargent; Jin-Song Hu

doi:10.1038/s41467-021-20955-5

Nature Communications (Jan 2021)

An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Shun-Chang Liu,
Chen-Min Dai,
Yimeng Min,
Yi Hou,
Andrew H. Proppe,
Ying Zhou,
Chao Chen,
Shiyou Chen,
Jiang Tang,
Ding-Jiang Xue,
Edward H. Sargent,
Jin-Song Hu

Affiliations

Shun-Chang Liu: Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences
Chen-Min Dai: Key Laboratory of Polar Materials and Devices (MOE), East China Normal University
Yimeng Min: Department of Electrical and Computer Engineering, University of Toronto
Yi Hou: Department of Electrical and Computer Engineering, University of Toronto
Andrew H. Proppe: Department of Electrical and Computer Engineering, University of Toronto
Ying Zhou: Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology
Chao Chen: Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology
Shiyou Chen: Key Laboratory of Polar Materials and Devices (MOE), East China Normal University
Jiang Tang: Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology
Ding-Jiang Xue: Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences
Edward H. Sargent: Department of Electrical and Computer Engineering, University of Toronto
Jin-Song Hu: Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences

DOI: https://doi.org/10.1038/s41467-021-20955-5
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 7

Abstract

Read online

Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

About the journal