CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS InXGa1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

A. A. Gorskiy; L. B. Berliner; E. V. Titova

Тонкие химические технологии (Aug 2013)

CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS InXGa1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

A. A. Gorskiy,
L. B. Berliner,
E. V. Titova

Affiliations

A. A. Gorskiy: M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
L. B. Berliner: M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
E. V. Titova: M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571

Journal volume & issue: Vol. 8, no. 4
pp. 85 – 91

Abstract

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A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a rotated substrate keeper with inductive heating used for numerical studying to obtain optimum conditions for the growth process and to calculate the growth rate and the composition of InxGa1-xAs nanolayers.

rotating substrate keeper, horizontal reactor, mocvd, movpe, 3d model, numerical studying, inxga1-xas/inp, nanolayers.

Published in Тонкие химические технологии

ISSN: 2410-6593 (Print); 2686-7575 (Online)
Publisher: MIREA - Russian Technological University
Country of publisher: Russian Federation
LCC subjects: Science: Chemistry
Website: https://www.finechem-mirea.ru

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