A Comprehensive Review of Single Event Transients on Various MOS Devices

Abstract

Due to the constant scaling of device sizes and the arrival of nanoscale technologies, Single-Event Transients (SETs) are becoming an increasingly important problem in the design and reliability evaluation of semiconductor devices. This paper extensively reviews a physics-based analytical model constructed to describe and predict the occurrence and behavior of SETs in semiconductor devices. TCAD simulations are used to compare the SET characteristics of various MOSFETs, such as DG-MOSFETs, Fin-FETs, NW-FETs, and NS-FETs, under varied device parameters like dielectric materials, Linear Energy Transfer (LET) values, strike positions, voltage biases, device dimensions and channel doping. This study helps in understanding the relative SET immunity of various transistors for given applications, particularly those involving radiation-prone areas.

Keywords

• Single event transients
• TCAD
• LET
• DG-MOSFET
• Fin-FET
• NW-FET