The Stack Optimization of Magnetic Heterojunction Structures for Next-Generation Spintronic Logic Applications

Abstract

Magnetic heterojunction structures with a suppressed interfacial Dzyaloshinskii–Moriya interaction and a sustainable long-range interlayer exchange coupling are achieved with an ultrathin platinum insertion layer. The systematic inelastic light scattering spectroscopy measurements indicate that the insertion layer restores the symmetry of the system and, then, the interfacial Dzyaloshinskii–Moriya interaction, which can prevent the identical magnetic domain wall motions, is obviously minimized. Nevertheless, the strong interlayer exchange coupling of the system is maintained. Consequently, synthetic ferromagnetic and antiferromagnetic exchange couplings as a function of the ruthenium layer thickness are observed as well. Therefore, these optimized magnetic multilayer stacks can avoid crucial issues, such as domain wall tilting and position problems, for next-generation spintronic logic applications. Moreover, the synthetic antiferromagnetic coupling can open a new path to develop a radically different NOT gate via current-induced magnetic domain wall motions and inversions.

Keywords

• spin torque majority gate
• Dzyaloshinskii–Moriya interaction
• micromagnetic simulations
• perpendicular magnetic anisotropy
• interlayer exchange coupling
• Ruderman–Kittel–Kasuya–Yosida interaction