Sub-<italic>kT/q</italic> Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

S. Dasgupta; A. Rajashekhar; K. Majumdar; N. Agrawal; A. Razavieh; S. Trolier-Mckinstry; S. Datta

doi:10.1109/JXCDC.2015.2448414

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (Jan 2015)

Sub-<italic>kT/q</italic> Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

S. Dasgupta,
A. Rajashekhar,
K. Majumdar,
N. Agrawal,
A. Razavieh,
S. Trolier-Mckinstry,
S. Datta

Affiliations

S. Dasgupta: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
A. Rajashekhar: Department of Material Sciences and Engineering, Pennsylvania State University, University Park, PA, USA
K. Majumdar: Sematech, Albany, NY, USA
N. Agrawal: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
A. Razavieh: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
S. Trolier-Mckinstry: Department of Material Sciences and Engineering, Pennsylvania State University, University Park, PA, USA
S. Datta: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA

DOI: https://doi.org/10.1109/JXCDC.2015.2448414
Journal volume & issue: Vol. 1
pp. 43 – 48

Abstract

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Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ~ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.

Published in IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

ISSN: 2329-9231 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics: Computer engineering. Computer hardware
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6570653

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