Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

Abstract

The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In $_{\mathrm {1-x}}$ GaxAs/ In $_{\mathrm {1-x}}$ GaxP, In $_{1-}$ xGax GAA JL FET developed and analyzed for their analog performance at high temperature. In $_{\mathrm {1-x}}$ GaxAs has a composition of 53% InAs and 47% GaAs with a band gap of 0.75 eV, whereas In $_{\mathrm {1-x}}$ GaxP and In $_{\mathrm {1-x}}$ GaxN exhibit a wider band gap of 1.90 eV and 3.2 eV, respectively, and exhibit different analog performance. An analytical model that is temperature-dependent for the drain current of In $_{\mathrm {1-x}}$ GaxAs, In $_{\mathrm {1-x}}$ GaxP, In $_{\mathrm {1-x}}$ GaxN GAA JL FET with mobility variations has also been developed. The ratio of transconductance-to-normalized drain current (gm/I $_{\mathrm {DS}}$ ) is utilized to examine analog properties. This ratio is a crucial measure of analog performance since it reveals the sensitivity and linearity of the device. All device parameters such as transconductance (g $_{\mathrm {m}}$ ), gm/IDS, cut-off frequency, and intrinsic gain were investigated for higher temperatures ranging from T =300 K to T =500 K. The newly developed device parameters have very low-temperature sensitivity, making these three material devices potential candidates for high temperature applications.

Keywords

• Band gap
• cut-off frequency
• intrinsic gain
• nanowire
• sensitivity
• transconductance