Moldavian Journal of the Physical Sciences (Dec 2006)

GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns

  • Lupu, Andrei

Journal volume & issue
Vol. 5, no. 3-4
pp. 349 – 354

Abstract

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GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane carrier transport in the wetting layer have been fabricated and characterized. The devices are operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue- shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts.