Evidence for the quenching of rapid photoresponse by defect generation in ultraviolet illumination of CuSbS2 films

Abstract

Phototransients are investigated for CuSbS2 films with varying the illumination energy. The generation and recombination of photocarriers, which are manifested as changes in the sheet conductivity of the films, take place almost instantaneously for excitation wavelengths of 970 and 633 nm. These rapid responses are, in contrast, absent for the illumination at wavelengths of 375 and 280 nm. In particular, roughly no photoconduction occurs in the case of 280 nm. The sheet conductivity develops thereby random two-level fluctuations following the illumination. Ultraviolet irradiation is thus suggested to generate crystalline defects, giving rise to the quenching of the instantaneous photoresponse caused by their trapping of the photocarriers. The photoresponse in simultaneous illumination at multiple wavelengths is dependent upon the relative intensities of the ultraviolet and visible/infrared components in a nonlinear fashion unless the photo-generated defects are overwhelmed by photocarriers.