Controlled growth of single-crystalline 2D p-type semiconductor α-MnSe for broadband photodetector

Meijie Zhu; Xiaojian Wang; Zuoquan Tan; Kai Li; Qingliang Feng; Li Chen; Le Wang

Results in Physics (Apr 2024)

Controlled growth of single-crystalline 2D p-type semiconductor α-MnSe for broadband photodetector

Meijie Zhu,
Xiaojian Wang,
Zuoquan Tan,
Kai Li,
Qingliang Feng,
Li Chen,
Le Wang

Affiliations

Meijie Zhu: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
Xiaojian Wang: School of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, China; School of Chemistry and Chemical Engineering, Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072, China
Zuoquan Tan: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
Kai Li: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
Qingliang Feng: School of Chemistry and Chemical Engineering, Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072, China
Li Chen: Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Corresponding author at: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China (L. Wang).
Le Wang: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China; Corresponding author at: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China (L. Wang).

Journal volume & issue: Vol. 59
p. 107558

Abstract

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As a wide band-gap p-type semiconductor, α-MnSe has been expected to make up for the scarcity of two-dimensional (2D) semiconductor materials, which is crucial for the construction of multifunctional and miniaturized p-n junctions. Herein, we report the synthesis of single crystalline α-MnSe with its domain size, thickness and coverage controlled by hydrogen modulated CVD. The back-gate FET device was fabricated to study the electrical properties of α-MnSe. Moreover, the α-MnSe-based photodetector exhibits a broadband photo-response ranging from 532 nm to 980 nm with response times as low as ∼ 20 ms, comparable to most 2D materials.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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