Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

Jixing Chai; Qianhu Liu; Liang Chen; Ben Cao; Deqi Kong; Tingjun Lin; Wenliang Wang; Guoqiang Li

doi:10.1002/aelm.202201193

Advanced Electronic Materials (Mar 2023)

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

Jixing Chai,
Qianhu Liu,
Liang Chen,
Ben Cao,
Deqi Kong,
Tingjun Lin,
Wenliang Wang,
Guoqiang Li

Affiliations

Jixing Chai: State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China
Qianhu Liu: State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China
Liang Chen: State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China
Ben Cao: State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China
Deqi Kong: State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China
Tingjun Lin: State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China
Wenliang Wang: State Key Laboratory of Luminescent Materials and Devices School of Material Science and Engineering South China University of Technology Guangzhou 510640 China
Guoqiang Li: State Key Laboratory of Luminescent Materials and Devices School of Material Science and Engineering South China University of Technology Guangzhou 510640 China

DOI: https://doi.org/10.1002/aelm.202201193
Journal volume & issue: Vol. 9, no. 3
pp. n/a – n/a

Abstract

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Abstract Due to wavelength‐selective characteristics, the InGaN‐based photodetectors show bright prospects in visible light communication and fast imaging system. However, the application of InGaN photodetectors with simple structures is limited in the above field owing to the slow response speed. Herein, an ultrafast photodetector based on axial InN/InGaN nanorod array (NRA) heterojunction is prepared through a self‐catalytic high (930 °C) and low (400 °C) temperature two‐step growth method by molecular beam epitaxy (MBE). The performance of photodetectors is analyzed by semiconductor device analyzer, wavelength response system (consists with a xenon lamp and monochromator), and time response system (combined by an optical chopper, a laser, and a digital oscilloscope). The photodetectors present a fast response speed with a rise/full time of 18.2/24.7 µs. Further analyses reveal a responsivity of 9.27 A W−1 and a specific detectivity of 3.54 × 1010 Jones under −1 V bias. As a result, the axial NRA heterojunction photodetectors exhibit great potential for application in ultrafast photoelectric conversion systems and provide valuable guidance for realizing ultrafast photodetectors.

Published in Advanced Electronic Materials

ISSN: 2199-160X (Online)
Publisher: Wiley-VCH
Country of publisher: Germany
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks; Science: Physics
Website: https://onlinelibrary.wiley.com/journal/2199160x

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