Up-Conversion Device Based on Quantum Dots With High-Conversion Efficiency Over 6&#x0025;

Haodong Tang; Kanming Shi; Nan Zhang; Zuoliang Wen; Xiangtian Xiao; Bing Xu; Haider Butt; Zoe Pikramenou; Kai Wang; Xiao Wei Sun

doi:10.1109/ACCESS.2020.2987043

IEEE Access (Jan 2020)

Up-Conversion Device Based on Quantum Dots With High-Conversion Efficiency Over 6%

Haodong Tang,
Kanming Shi,
Nan Zhang,
Zuoliang Wen,
Xiangtian Xiao,
Bing Xu,
Haider Butt,
Zoe Pikramenou,
Kai Wang,
Xiao Wei Sun

Affiliations

Haodong Tang: ORCiD; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Kanming Shi: ORCiD; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Nan Zhang: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Zuoliang Wen: ORCiD; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Xiangtian Xiao: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Bing Xu: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Haider Butt: Department of Mechanical Engineering, University of Birmingham, Birmingham, U.K
Zoe Pikramenou: School of Chemistry, University of Birmingham, Birmingham, U.K
Kai Wang: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Xiao Wei Sun: ORCiD; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China

DOI: https://doi.org/10.1109/ACCESS.2020.2987043
Journal volume & issue: Vol. 8
pp. 71041 – 71049

Abstract

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Near infrared to visible up-conversion devices have every growing demand in a myriad of industrial sectors including photovoltaics, energy harvesting, medicine and imaging. Here we have demonstrated an up-conversion device which utilizes quantum dots for both infrared absorption and visible emission. The band structure of the device is designed and optimized with well-constructed carrier transport and blocking layers. The achieved up-conversion device exhibits an impressive conversion efficiency of over 6 %, with a high near infrared on-off ratio of over 104. The device demonstrates a potential new approach for an up-conversion device designed solely on quantum dots with high efficiency.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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