Impact of different parameters on the static random access memory under the total ionizing dose

Abstract

The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature and total dose on TID. The results indicated that within a certain range, the dose rate had little influence on the TID of the device. The larger the characteristic size of the device, the greater TID effect, while the higher temperature, the weaker the total dose effect. In addition, the typical dose rate and the uniformity of the source are achieved. The research of the paper provide an insight into radiation hardening, particularly in the aerospace and the nuclear industries.

Keywords

• static random access memory
• total dose effect
• power supply current
• feature size