Mechanism of local electric oxidation on two-dimensional MoS2 for resistive memory application

Hui Dong; Junzheng Mu; Jinfeng Peng; Xuejun Zheng; Liang Chu

iScience (Oct 2024)

Mechanism of local electric oxidation on two-dimensional MoS2 for resistive memory application

Hui Dong,
Junzheng Mu,
Jinfeng Peng,
Xuejun Zheng,
Liang Chu

Affiliations

Hui Dong: School of Electro-mechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China
Junzheng Mu: School of Mechanical Engineering & Engineering Research Center of Complex Tracks Processing Technology and Equipment of MoE & Key Laboratory of Welding Robot and Application Technology of Hunan Province, Xiangtan University, Xiangtan 411105, China
Jinfeng Peng: School of Mechanical Engineering & Engineering Research Center of Complex Tracks Processing Technology and Equipment of MoE & Key Laboratory of Welding Robot and Application Technology of Hunan Province, Xiangtan University, Xiangtan 411105, China
Xuejun Zheng: School of Electro-mechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China; Corresponding author
Liang Chu: School of Electronics and Information & Institute of Carbon Neutrality and New Energy, Hangzhou Dianzi University, Hangzhou 310018, China; Corresponding author

Journal volume & issue: Vol. 27, no. 10
p. 110819

Abstract

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Summary: The manipulation and mechanism of two-dimensional (2D) transition metal dichalcogenides (TMDs) by external electric field are significant to the photoelectric properties. Herein, the 2D MoS2 nanosheets were oxidized to form MoS2-MoO3 local heterojunctions by an electric field, applied in multistable memristors for the proposal of NanoQR code. A modified thermal oxidation model was derived to reveal the mechanism of local electric oxidation on 2D MoS2. From current-voltage curves, the barrier height of the MoS2 device showed an increase of 0.39 eV due to local oxidation after applying voltage for 480 s. Based on density-functional theory, the increase of barrier height was calculated as 0.38 eV between MoS2-MoS2 and MoS2-MoO3 supercells. The 2D MoS2-MoO3 local heterojunctions were further applied as multistable memory storage at the nanoscale. The findings suggest a novel strategy for controlling local electric oxidation on 2D TMDs to manipulate the properties for the application of photoelectric memory nanodevices.

Published in iScience

ISSN: 2589-0042 (Online)
Publisher: Elsevier
Country of publisher: United States
LCC subjects: Science
Website: http://www.cell.com/iscience/home

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