Nature Communications (Jul 2019)
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
- Sara Barja,
- Sivan Refaely-Abramson,
- Bruno Schuler,
- Diana Y. Qiu,
- Artem Pulkin,
- Sebastian Wickenburg,
- Hyejin Ryu,
- Miguel M. Ugeda,
- Christoph Kastl,
- Christopher Chen,
- Choongyu Hwang,
- Adam Schwartzberg,
- Shaul Aloni,
- Sung-Kwan Mo,
- D. Frank Ogletree,
- Michael F. Crommie,
- Oleg V. Yazyev,
- Steven G. Louie,
- Jeffrey B. Neaton,
- Alexander Weber-Bargioni
Affiliations
- Sara Barja
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Sivan Refaely-Abramson
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Bruno Schuler
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Diana Y. Qiu
- Department of Physics, University of California at Berkeley, Berkeley
- Artem Pulkin
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)
- Sebastian Wickenburg
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Hyejin Ryu
- Advanced Light Source, Lawrence Berkeley National Laboratory
- Miguel M. Ugeda
- Departamento de Física de Materiales, Centro de Física de Materiales, University of the Basque Country UPV/EHU-CSIC
- Christoph Kastl
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Christopher Chen
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Choongyu Hwang
- Department of Physics, Pusan National University
- Adam Schwartzberg
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Shaul Aloni
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory
- D. Frank Ogletree
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Michael F. Crommie
- Department of Physics, University of California at Berkeley, Berkeley
- Oleg V. Yazyev
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)
- Steven G. Louie
- Department of Physics, University of California at Berkeley, Berkeley
- Jeffrey B. Neaton
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Alexander Weber-Bargioni
- Molecular Foundry, Lawrence Berkeley National Laboratory
- DOI
- https://doi.org/10.1038/s41467-019-11342-2
- Journal volume & issue
-
Vol. 10,
no. 1
pp. 1 – 8
Abstract
The nature of defects in transition metal dichalcogenide semiconductors is still under debate. Here, the authors determine the atomic structure and electronic properties of chalcogen-site point defects common to monolayer MoSe2 and WS2, and find that these are substitutional defects, where a chalcogen atom is substituted by an oxygen atom, rather than vacancies.
