Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region

Konstantinos Papatryfonos; Todora Angelova; Antoine Brimont; Barry Reid; Stefan Guldin; Peter Raymond Smith; Mingchu Tang; Keshuang Li; Alwyn J. Seeds; Huiyun Liu; David R. Selviah

doi:10.1063/5.0039631

AIP Advances (Feb 2021)

Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region

Konstantinos Papatryfonos,
Todora Angelova,
Antoine Brimont,
Barry Reid,
Stefan Guldin,
Peter Raymond Smith,
Mingchu Tang,
Keshuang Li,
Alwyn J. Seeds,
Huiyun Liu,
David R. Selviah

Affiliations

Konstantinos Papatryfonos: Department of Electronic and Electrical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
Todora Angelova: Valencia Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera, s/n 46022, Spain
Antoine Brimont: Valencia Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera, s/n 46022, Spain
Barry Reid: Department of Chemical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
Stefan Guldin: Department of Chemical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
Peter Raymond Smith: Department of Electronic and Electrical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
Mingchu Tang: Department of Electronic and Electrical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
Keshuang Li: Department of Electronic and Electrical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
Alwyn J. Seeds: Department of Electronic and Electrical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
Huiyun Liu: Department of Electronic and Electrical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom
David R. Selviah: Department of Electronic and Electrical Engineering, University College London, UCL, Torrington Place, London WC1E 7JE, United Kingdom

DOI: https://doi.org/10.1063/5.0039631
Journal volume & issue: Vol. 11, no. 2
pp. 025327 – 025327-10

Abstract

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A series of AlxGa(1−x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the technologically relevant composition range, x < 0.45, and characterized using spectroscopic ellipsometry to provide accurate refractive index values in the wavelength region below the bandgap. Particular attention is given to O-band and C-band telecommunication wavelengths around 1.3 µm and 1.55 µm, as well as at 825 nm. MBE gave a very high accuracy for grown layer thicknesses, and the alloys’ precise compositions and bandgap values were confirmed using high-resolution x-ray diffraction and photoluminescence, to improve the refractive index model fitting accuracy. This work is the first systematic study for MBE-grown AlxGa(1−x)As across a wide spectral range. In addition, we employed a very rigorous measurement-fitting procedure, which we present in detail.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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