Electrical and Gas Sensor Properties of Nb(V) Doped Nanocrystalline β-Ga2O3

Matvei Andreev; Maxim Topchiy; Andrey Asachenko; Artemii Beltiukov; Vladimir Amelichev; Alina Sagitova; Sergey Maksimov; Andrei Smirnov; Marina Rumyantseva; Valeriy Krivetskiy

doi:10.3390/ma15248916

Materials (Dec 2022)

Electrical and Gas Sensor Properties of Nb(V) Doped Nanocrystalline β-Ga2O3

Matvei Andreev,
Maxim Topchiy,
Andrey Asachenko,
Artemii Beltiukov,
Vladimir Amelichev,
Alina Sagitova,
Sergey Maksimov,
Andrei Smirnov,
Marina Rumyantseva,
Valeriy Krivetskiy

Affiliations

Matvei Andreev: Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119234 Moscow, Russia
Maxim Topchiy: A.V. Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Leninsky Prospect 29, 119991 Moscow, Russia
Andrey Asachenko: A.V. Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Leninsky Prospect 29, 119991 Moscow, Russia
Artemii Beltiukov: Udmurt Federal Research Center of the Ural Branch of the Russian Academy of Sciences, Tatyana Baramzina St. 34, 426067 Izhevsk, Russia
Vladimir Amelichev: Scientific-Manufacturing Complex «Technological Centre», Shokina Square, House 1, Bld. 7 Off. 7237, 124498 Zelenograd, Moscow, Russia
Alina Sagitova: Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119234 Moscow, Russia
Sergey Maksimov: Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119234 Moscow, Russia
Andrei Smirnov: Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119234 Moscow, Russia
Marina Rumyantseva: Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119234 Moscow, Russia
Valeriy Krivetskiy: Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119234 Moscow, Russia

DOI: https://doi.org/10.3390/ma15248916
Journal volume & issue: Vol. 15, no. 24
p. 8916

Abstract

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A flame spray pyrolysis (FSP) technique was applied to obtain pure and Nb(V)-doped nanocrystalline β-Ga2O3, which were further studied as gas sensor materials. The obtained samples were characterized with XRD, XPS, TEM, Raman spectroscopy and BET method. Formation of GaNbO4 phase is observed at high annealing temperatures. Transition of Ga(III) into Ga(I) state during Nb(V) doping prevents donor charge carriers generation and hinders considerable improvement of electrical and gas sensor properties of β-Ga2O3. Superior gas sensor performance of obtained ultrafine materials at lower operating temperatures compared to previously reported thin film Ga2O3 materials is shown.

Published in Materials

ISSN: 1996-1944 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering; Technology: Engineering (General). Civil engineering (General); Science: Natural history (General): Microscopy; Science: Physics: Descriptive and experimental mechanics
Website: http://www.mdpi.com/journal/materials/

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