Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)

DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS

  • A. H. Sohrabi,
  • N. V. Gaponenko,
  • M. V. Rudenko,
  • S. M. Zavadski,
  • D. A. Golosov,
  • A. F. Guk,
  • V. V. Kolos,
  • A. N. Pyatlitski,
  • A. S. Turtsevich

Journal volume & issue
Vol. 0, no. 7
pp. 28 – 31

Abstract

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The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were made from platinum and nickel accordingly. The average values of the dielectric permittivity, ε, and the loss factor, tg δ, were found between 150-190 and 0,06-0,1 respectively. The standard deviation values of the mentioned characteristics were calculated.

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