The measure of irregularities of nanosheets

Abstract

Nanosheets are two-dimensional polymeric materials, which are among the most active areas of investigation of chemistry and physics. Many diverse physicochemical properties of compounds are closely related to their underlying molecular topological descriptors. Thus, topological indices are fascinating beginning points to any statistical approach for attaining quantitative structure–activity (QSAR) and quantitative structure–property (QSPR) relationship studies. Irregularity measures are generally used for quantitative characterization of the topological structure of non-regular graphs. In various applications and problems in material engineering and chemistry, it is valuable to be well-informed of the irregularity of a molecular structure. Furthermore, the estimation of the irregularity of graphs is helpful for not only QSAR/QSPR studies but also different physical and chemical properties, including boiling and melting points, enthalpy of vaporization, entropy, toxicity, and resistance. In this article, we compute the irregularity measures of graphene nanosheet, H-naphtalenic nanosheet, SiO2{\text{SiO}}_{2} nanosheet, and the nanosheet covered by C3{C}_{3} and C6{C}_{6}.

Keywords

• molecular graph
• irregularity indices
• nanosheets