Design Optimization for High-Performance Self-Assembled Quantum Dot Lasers With Fabry–Perot Cavity

Abstract

An optimization guideline is proposed for designing of the single longitudinal-mode Fabry-Perot (FP) laser based on the self-assembled InGaAs/GaAs quantum dots (QD). With the optimal values of the inhomogeneous and homogeneous gain-broadening parameters, a design example is simulated and analyzed. It shows that a side-mode suppression ratio (SMSR) over 40 dB and a 3-dB bandwidth of 17 GHz for the small-signal modulation response are obtained. The quantitative conditions for the performance feasibility are examined with respect to the gain broadening parameters.

Keywords

• Diode lasers
• semiconductor lasers
• quantum dots (QDs)