Quantum simulation of the Hubbard model with dopant atoms in silicon

J. Salfi; J. A. Mol; R. Rahman; G. Klimeck; M. Y. Simmons; L. C. L. Hollenberg; S. Rogge

doi:10.1038/ncomms11342

Nature Communications (Apr 2016)

Quantum simulation of the Hubbard model with dopant atoms in silicon

J. Salfi,
J. A. Mol,
R. Rahman,
G. Klimeck,
M. Y. Simmons,
L. C. L. Hollenberg,
S. Rogge

Affiliations

J. Salfi: Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales
J. A. Mol: Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales
R. Rahman: Department of Electrical Engineering, Purdue University
G. Klimeck: Department of Electrical Engineering, Purdue University
M. Y. Simmons: Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales
L. C. L. Hollenberg: Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne
S. Rogge: Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales

DOI: https://doi.org/10.1038/ncomms11342
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 6

Abstract

Read online

The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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