Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

H. Wang; Z. R. Liu; H. Y. Yoong; T. R. Paudel; J. X. Xiao; R. Guo; W. N. Lin; P. Yang; J. Wang; G. M. Chow; T. Venkatesan; E. Y. Tsymbal; H. Tian; J. S. Chen

doi:10.1038/s41467-018-05662-y

Nature Communications (Aug 2018)

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

H. Wang,
Z. R. Liu,
H. Y. Yoong,
T. R. Paudel,
J. X. Xiao,
R. Guo,
W. N. Lin,
P. Yang,
J. Wang,
G. M. Chow,
T. Venkatesan,
E. Y. Tsymbal,
H. Tian,
J. S. Chen

Affiliations

H. Wang: Department of Materials Science and Engineering, National University of Singapore
Z. R. Liu: Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University
H. Y. Yoong: Department of Materials Science and Engineering, National University of Singapore
T. R. Paudel: Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska
J. X. Xiao: Department of Materials Science and Engineering, National University of Singapore
R. Guo: Department of Materials Science and Engineering, National University of Singapore
W. N. Lin: Department of Materials Science and Engineering, National University of Singapore
P. Yang: Singapore Synchrotron Light Source (SSLS), National University of Singapore
J. Wang: Department of Materials Science and Engineering, National University of Singapore
G. M. Chow: Department of Materials Science and Engineering, National University of Singapore
T. Venkatesan: Department of Materials Science and Engineering, National University of Singapore
E. Y. Tsymbal: Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska
H. Tian: Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University
J. S. Chen: Department of Materials Science and Engineering, National University of Singapore

DOI: https://doi.org/10.1038/s41467-018-05662-y
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 8

Abstract

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High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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