Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference

Abstract

Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power density, inherited from the high-speed switching feature. However, high-speed switching also induces gate-source voltage interference, which impacts the overall character of the conversion system. This paper considered the impact of gate-source voltage interference on loss, revealing an efficiency optimization for all-SiC PWM rectifiers. Firstly, this paper theoretically investigated the mechanism of improving the conversion system efficiency by using the 4-pin Kelvin packaged SiC MOSFETs. Then, based on the industrial product case study, loss distribution, using different package styles, was quantitatively analyzed. Finally, experiment test results verified the efficiency improvement of the PWM rectifier with the 4-pin Kelvin package SiC MOSFETs.

Keywords

• silicon carbide semiconductors
• loss distribution
• kelvin package
• converter efficiency