Energies (Feb 2023)

Integration of SiC Devices and High-Frequency Transformer for High-Power Renewable Energy Applications

  • Weichong Yao,
  • Junwei Lu,
  • Foad Taghizadeh,
  • Feifei Bai,
  • Andrew Seagar

DOI
https://doi.org/10.3390/en16031538
Journal volume & issue
Vol. 16, no. 3
p. 1538

Abstract

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This paper presents a novel structure of Integrated SiC MOSFETs with a high-frequency transformer (I-SiC-HFT) for various high-power isolated DC–DC converters. Several resonant converters are considered for integration in this paper, including the phase-shift full-bridge (PSFB) converter, inductor–inductor–capacitor (LLC) resonant converter, bidirectional PSFB converter, and capacitor–inductor–inductor–capacitor (CLLC) resonant converter. The applications of I-SiC-HFT are focused on V2G EV battery charging systems, energy storage in DC and AC microgrids, and renewable energy systems. SiC devices, including MOSFETs, Schottky diodes, and MOSFET modules, are used in this novel structure of I-SiC-HFT. The high-frequency magnetic structure uses distributed ferrite cores to form a large central space to accommodate SiC devices. The optimized architecture of I-SiC-HFT and heatsink structure is proposed for thermal management of SiC devices. To prove the concept, a small-scale 1.5 kW prototype I-SiC-HFT is used to demonstrate the basic structure and various performance indicators through the FEM based electromagnetic simulation and DC–DC converter experiments.

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