(INVITED) Tungsten oxide films by radio-frequency magnetron sputtering for near-infrared photonics

Abstract

Tungsten oxide WO3-x is a transition metal oxide and a wide bandgap semiconductor, with a wide range of possible optical and photonic applications. In dependence on the fabrication techniques different stoichiometric ratios (x) and crystalline phases are obtained, which end up with an overall polymorph and extremely versatile material, characterized by tailorable dielectric properties. In particular, WO3-x thin film deposition by Radio-Frequency (RF) sputtering techniques provides a precise control of thickness, composition and nanostructure. In this work we introduce and discuss a specific process of deposition, that is magnetron RF-sputtering as a suitable way to grow WO3-x thin films with selected properties. Possibility of integrating WO3-x thin film on to one-dimensional (1D) photonic crystal structures is also explored. Films are transparent in the near and short-wavelength infrared optical spectral range. Their quality is assessed by morphological, structural and compositional characterizations. Dielectric properties are characterized by optical spectroscopy and ellipsometry, the latter also evaluates the degree of optical anisotropy of thin films in their crystalline phase. An 1D photonics bandgap structure is designed, formed by a SiO2–TiO2 multilayer and capped with a 450 nm-thick transparent WO3-x film, so that surface confinement and local enhancement of the optical field at 1416 nm in the topmost WO3-x layer is obtained.

Keywords

• Tungsten oxide
• NIR transparency
• Optical anisotropy
• Wide-bandgap semiconductors
• Photonic bandgap materials
• Radio-frequency sputtering