Atom probe microscopy of zinc isotopic enrichment in ZnO nanorods

C. N. Ironside; D. W. Saxey; W. D. A. Rickard; C. Gray; E. McGlynn; S. M. Reddy; N. A. Marks

doi:10.1063/1.4976299

AIP Advances (Feb 2017)

Atom probe microscopy of zinc isotopic enrichment in ZnO nanorods

C. N. Ironside,
D. W. Saxey,
W. D. A. Rickard,
C. Gray,
E. McGlynn,
S. M. Reddy,
N. A. Marks

Affiliations

C. N. Ironside: Department of Physics and Astronomy, Curtin University, Bentley, Perth, 6102 WA, Australia
D. W. Saxey: Geoscience Atom Probe, Advanced Resource Characterisation Facility, John De Laeter Centre, Curtin University, Building 301, Bentley, WA 6102, Australia
W. D. A. Rickard: Geoscience Atom Probe, Advanced Resource Characterisation Facility, John De Laeter Centre, Curtin University, Building 301, Bentley, WA 6102, Australia
C. Gray: School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9, Ireland
E. McGlynn: School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9, Ireland
S. M. Reddy: Geoscience Atom Probe, Advanced Resource Characterisation Facility, John De Laeter Centre, Curtin University, Building 301, Bentley, WA 6102, Australia
N. A. Marks: Department of Physics and Astronomy, Curtin University, Bentley, Perth, 6102 WA, Australia

DOI: https://doi.org/10.1063/1.4976299
Journal volume & issue: Vol. 7, no. 2
pp. 025004 – 025004-6

Abstract

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We report on atomic probe microscopy (APM) of isotopically enriched ZnO nanorods that measures the spatial distribution of zinc isotopes in sections of ZnO nanorods for natural abundance natZnO and 64Zn and 66Zn enriched ZnO nanorods. The results demonstrate that APM can accurately quantify isotopic abundances within these nanoscale structures. Therefore the atom probe microscope is a useful tool for characterizing Zn isotopic heterostructures in ZnO. Isotopic heterostructures have been proposed for controlling thermal conductivity and also, combined with neutron transmutation doping, they could be key to a novel technology for producing p-n junctions in ZnO thin films and nanorods.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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