Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Dengkui Wang; Xian Gao; Jilong Tang; Xuan Fang; Dan Fang; Xinwei Wang; Fengyuan Lin; Xiaohua Wang; Rui Chen; Zhipeng Wei

doi:10.1038/s41598-020-80796-y

Scientific Reports (Jan 2021)

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Dengkui Wang,
Xian Gao,
Jilong Tang,
Xuan Fang,
Dan Fang,
Xinwei Wang,
Fengyuan Lin,
Xiaohua Wang,
Rui Chen,
Zhipeng Wei

Affiliations

Dengkui Wang: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Xian Gao: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Jilong Tang: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Xuan Fang: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Dan Fang: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Xinwei Wang: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Fengyuan Lin: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Xiaohua Wang: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
Rui Chen: Department of Electrical and Electronic Engineering, Southern University of Science and Technology
Zhipeng Wei: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology

DOI: https://doi.org/10.1038/s41598-020-80796-y
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 7

Abstract

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Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.

Published in Scientific Reports

ISSN: 2045-2322 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Medicine; Science
Website: https://www.nature.com/srep/

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