Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties

Abstract

In this paper, for the first time, we report a strong effect of the arsenic pressure used for the high-rate GaAs capping of self-assembled InAs quantum dots on their optical properties. A 140 nm red shift of the photoluminescence peak position is observed when the overgrowth arsenic pressure increases threefold. We explain this behavior in terms of different intensities of quantum dot decomposition, which occurs during the overgrowth under different conditions. When the arsenic pressure is sufficiently high, a GaAs capping layer is formed by deposited species with a low impact on initial quantum dots. At a low arsenic pressure, arsenic deficiency leads to the intensive intermixing caused both by the enhanced Ga/In atom exchange and by the consumption of arsenic atoms belonging to quantum dots for the GaAs capping layer formation. As a result of the overgrowth, quantum dots are divided into families with a large (high pressure) and a small (low pressure) average size, yielding long-wave (1.23 µm) and short-wave (1.09 µm) photoluminescence peaks, respectively. Thus, a significant influence of the overgrowth arsenic pressure on the characteristics of InAs quantum dots is evidenced in this study.

Keywords

• molecular beam epitaxy
• InAs
• GaAs
• quantum dots
• overgrowth
• photoluminescence