Preparation and thermal volatility characteristics of In2O3/ITO thin film thermocouple by RF magnetron sputtering

Yantao Liu; Wei Ren; Peng Shi; Dan Liu; Ming Liu; Weixuan Jing; Bian Tian; Zuoguang Ye; Zhuangde Jiang

doi:10.1063/1.4999246

AIP Advances (Nov 2017)

Preparation and thermal volatility characteristics of In2O3/ITO thin film thermocouple by RF magnetron sputtering

Yantao Liu,
Wei Ren,
Peng Shi,
Dan Liu,
Ming Liu,
Weixuan Jing,
Bian Tian,
Zuoguang Ye,
Zhuangde Jiang

Affiliations

Yantao Liu: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Wei Ren: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Peng Shi: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Dan Liu: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Ming Liu: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Weixuan Jing: International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China
Bian Tian: International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China
Zuoguang Ye: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Zhuangde Jiang: International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China

DOI: https://doi.org/10.1063/1.4999246
Journal volume & issue: Vol. 7, no. 11
pp. 115025 – 115025-8

Abstract

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In2O3/ITO thin film thermocouples for high temperature measurement (up to 1250 °C) were prepared by radio frequency magnetron sputtering method with different annealing temperatures from 1100 °C to 1250 °C. The changes with microstructure characteristics and the thickness of the thin film thermocouples were investigated as a function of sintering temperature in the range of 1100 °C -1250 °C and annealing time from 2 hrs to 10 hrs at 1200 °C by using XRD and SEM techniques. The thermoelectric output was measured and its results indicated that this thermocouple had a steady and constant voltage output from room temperature to 1247 oC. The thermoelectric voltage and Seebeck coefficient of In2O3/ITO thermocouples measured at 1247 oC were 166.7 mV and 136.3 μV/oC, respectively.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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