Nature Communications (Jan 2017)

Purely antiferromagnetic magnetoelectric random access memory

  • Tobias Kosub,
  • Martin Kopte,
  • Ruben Hühne,
  • Patrick Appel,
  • Brendan Shields,
  • Patrick Maletinsky,
  • René Hübner,
  • Maciej Oskar Liedke,
  • Jürgen Fassbender,
  • Oliver G. Schmidt,
  • Denys Makarov

DOI
https://doi.org/10.1038/ncomms13985
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 7

Abstract

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Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.