Nanoscale Research Letters (Dec 2019)

Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms

  • Hang Yang,
  • Wei Chen,
  • Xiaoming Zheng,
  • Dongsheng Yang,
  • Yuze Hu,
  • Xiangzhe Zhang,
  • Xin Ye,
  • Yi Zhang,
  • Tian Jiang,
  • Gang Peng,
  • Xueao Zhang,
  • Renyan Zhang,
  • Chuyun Deng,
  • Shiqiao Qin

DOI
https://doi.org/10.1186/s11671-019-3179-4
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 6

Abstract

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Abstract The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

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