Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

P. Huang; Q. H. Luc; A. Sibaja-Hernandez; C. W. Hsu; J. Y. Wu; H. L. Ko; N. A. Tran; N. Collaert; E. Y. Chang

doi:10.1063/5.0037378

AIP Advances (Jan 2021)

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

P. Huang,
Q. H. Luc,
A. Sibaja-Hernandez,
C. W. Hsu,
J. Y. Wu,
H. L. Ko,
N. A. Tran,
N. Collaert,
E. Y. Chang

Affiliations

P. Huang: International College of Semiconductor Technology, National Chiao Tung University, Hsinchu 30010, Taiwan
Q. H. Luc: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
A. Sibaja-Hernandez: Imec, Leuven 3001, Belgium
C. W. Hsu: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
J. Y. Wu: International College of Semiconductor Technology, National Chiao Tung University, Hsinchu 30010, Taiwan
H. L. Ko: International College of Semiconductor Technology, National Chiao Tung University, Hsinchu 30010, Taiwan
N. A. Tran: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
N. Collaert: Imec, Leuven 3001, Belgium
E. Y. Chang: International College of Semiconductor Technology, National Chiao Tung University, Hsinchu 30010, Taiwan

DOI: https://doi.org/10.1063/5.0037378
Journal volume & issue: Vol. 11, no. 1
pp. 015050 – 015050-8

Abstract

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In this work, we demonstrated considerable enhancement of the transport characteristics of n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with the assistance of in situ NH3/N2 remote-plasma (RP) treatment. According to the measurement and simulation results, the RP treated sample shows superior device performances as compared to the control sample without plasma treatment including (a) improved on-current (Ion) from 8.5 mA/mm to 17 mA/mm, (b) improved transconductance (Gm) from 16.05 mS/mm to 28.52 mS/mm, (c) suppressed subthreshold swing from 189 mV/dec to 170 mV/dec, (d) suppressed drain induced barrier lowering from 36 mV/V to 28 mV/V, (e) intensified peak effective mobility (μeff) from 1896 cm2 V−1 s−1 to 2956 cm2 V−1 s−1, and (f) reduced acceptor-type density of interface trap state (Dit,A) to 44%. By using TCAD simulation, device output performance is found to be dramatically impacted by the trap state (especially acceptor-type) at the Al2O3/InGaAs interface.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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