Magnetoelectric Sensor Operating in d15 Thickness-Shear Mode for High-Frequency Current Detection

Fuchao Li; Jingen Wu; Sujie Liu; Jieqiang Gao; Bomin Lin; Jintao Mo; Jiacheng Qiao; Yiwei Xu; Yongjun Du; Xin He; Yifei Zhou; Lan Zeng; Zhongqiang Hu; Ming Liu

doi:10.3390/s24082396

Sensors (Apr 2024)

Magnetoelectric Sensor Operating in d15 Thickness-Shear Mode for High-Frequency Current Detection

Fuchao Li,
Jingen Wu,
Sujie Liu,
Jieqiang Gao,
Bomin Lin,
Jintao Mo,
Jiacheng Qiao,
Yiwei Xu,
Yongjun Du,
Xin He,
Yifei Zhou,
Lan Zeng,
Zhongqiang Hu,
Ming Liu

Affiliations

Fuchao Li: State Grid Sichuan Electric Power Company, Chengdu 610041, China
Jingen Wu: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Sujie Liu: State Grid Sichuan Electric Power Company, Chengdu 610041, China
Jieqiang Gao: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Bomin Lin: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Jintao Mo: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Jiacheng Qiao: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Yiwei Xu: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Yongjun Du: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Xin He: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Yifei Zhou: State Grid Sichuan Electric Power Company, Chengdu 610041, China
Lan Zeng: State Grid Sichuan Electric Power Company, Chengdu 610041, China
Zhongqiang Hu: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Ming Liu: State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

DOI: https://doi.org/10.3390/s24082396
Journal volume & issue: Vol. 24, no. 8
p. 2396

Abstract

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For the application of high-frequency current detection in power systems, such as very fast transient current, lightning current, partial discharge pulse current, etc., current sensors with a quick response are indispensable. Here, we propose a high-frequency magnetoelectric current sensor, which consists of a PZT piezoelectric ceramic and Metglas amorphous alloy. The proposed sensor is designed to work under d15 thickness-shear mode, with the resonant frequency around 1.029 MHz. Furthermore, the proposed sensor is fabricated as a high-frequency magnetoelectric current sensor. A comparative experiment is carried out between the tunnel magnetoresistance sensor and the magnetoelectric sensor, in the aspect of high-frequency current detection up to 3 MHz. Our experimental results demonstrate that the d15 thickness-shear mode magnetoelectric sensor has great potential for high-frequency current detection in smart grids.

Published in Sensors

ISSN: 1424-8220 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Chemical technology
Website: http://www.mdpi.com/journal/sensors

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