Green emission in carbon doped ZnO films

L. T. Tseng; J. B. Yi; X. Y. Zhang; G. Z. Xing; H. M. Fan; T. S. Herng; X. Luo; M. Ionescu; J. Ding; S. Li

doi:10.1063/1.4882172

AIP Advances (Jun 2014)

Green emission in carbon doped ZnO films

L. T. Tseng,
J. B. Yi,
X. Y. Zhang,
G. Z. Xing,
H. M. Fan,
T. S. Herng,
X. Luo,
M. Ionescu,
J. Ding,
S. Li

Affiliations

L. T. Tseng: School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052, Australia
J. B. Yi: School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052, Australia
X. Y. Zhang: School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052, Australia
G. Z. Xing: School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052, Australia
H. M. Fan: School of Chemical Engineering, Northwest University, Xi'an 710069, China
T. S. Herng: Department of Materials Science and Engineering, National University of Singapore, 119260, Singapore
X. Luo: School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052, Australia
M. Ionescu: Australian Nuclear Science and Technology Organization, (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234, Australia
J. Ding: Department of Materials Science and Engineering, National University of Singapore, 119260, Singapore
S. Li: School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052, Australia

DOI: https://doi.org/10.1063/1.4882172
Journal volume & issue: Vol. 4, no. 6
pp. 067117 – 067117-7

Abstract

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The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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