GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

Jincheng Li; Kamran Forghani; Yingxin Guan; Wenyuan Jiao; Wei Kong; Kristen Collar; Tong-Ho Kim; Thomas F. Kuech; April S. Brown

doi:10.1063/1.4922139

AIP Advances (Jun 2015)

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

Jincheng Li,
Kamran Forghani,
Yingxin Guan,
Wenyuan Jiao,
Wei Kong,
Kristen Collar,
Tong-Ho Kim,
Thomas F. Kuech,
April S. Brown

Affiliations

Jincheng Li: Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USA
Kamran Forghani: Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706 USA
Yingxin Guan: Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706 USA
Wenyuan Jiao: Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USA
Wei Kong: Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USA
Kristen Collar: Department of Physics, Duke University, Durham, NC, 27708 USA
Tong-Ho Kim: Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USA
Thomas F. Kuech: Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706 USA
April S. Brown: Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USA

DOI: https://doi.org/10.1063/1.4922139
Journal volume & issue: Vol. 5, no. 6
pp. 067103 – 067103-6

Abstract

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We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1−yBiy. The LOPC mode is used to calculate the hole concentration in GaAs1−yBiy epitaxial layers. A linear relationship between hole concentration and photoluminescence intensity is found for a range of samples grown at various temperatures and growth rates. In addition, the composition (y) of Bi in GaAs1−yBiy is also found to be linearly related to the GaAs Fröhlich scattering intensity.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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