Growth and investigation of TiO2 and AlN nanostructure’s properties

Abstract

We have grown TiO2 and AlN under ultra high vacuum and high pressure conditions and studied their structures with using AES and SEM techniques. The obtained results show that an amorphous film of TiO2 and AlN could be formed on silicon substrate. Furthermore, TiO2 and AlN are high – K dielectric materials and they can thus be replaced to ultra thin gate oxide film.

Keywords

• semiconductor
• thin film
• CMOS
• TiO2
• AlN
• synchrotron radiation
• AES and SEM techniques