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Scientific Reports
(Apr 2024)
Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers
Weicheng Cao,
Chunyan Song,
Hui Liao,
Ningxuan Yang,
Rui Wang,
Guanghui Tang,
Hongyu Ji
Affiliations
Weicheng Cao
Department of Physics, College of Sciences, Shihezi University
Chunyan Song
Department of Physics, College of Sciences, Shihezi University
Hui Liao
Department of Physics, College of Sciences, Shihezi University
Ningxuan Yang
Department of Physics, College of Sciences, Shihezi University
Rui Wang
Department of Physics, College of Sciences, Shihezi University
Guanghui Tang
Department of Physics, College of Sciences, Shihezi University
Hongyu Ji
Department of Physics, College of Sciences, Shihezi University
DOI
https://doi.org/10.1038/s41598-024-60017-6
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 2
Abstract
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