Scientific Reports (Apr 2024)

Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

  • Weicheng Cao,
  • Chunyan Song,
  • Hui Liao,
  • Ningxuan Yang,
  • Rui Wang,
  • Guanghui Tang,
  • Hongyu Ji

DOI
https://doi.org/10.1038/s41598-024-60017-6
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 2

Abstract

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