Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

• Dawid Jarosz,
• Marcin Stachowicz,
• Piotr Krzeminski,
• Marta Ruszala,
• Anna Jus,
• Pawel Sliz,
• Dariusz Ploch,
• Michal Marchewka

Affiliations

Dawid Jarosz

International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

Marcin Stachowicz

Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

Piotr Krzeminski

Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland

Marta Ruszala

Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland

Anna Jus

Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland

Pawel Sliz

Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland

Dariusz Ploch

Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland

Michal Marchewka

Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland