Exciton-phonon and exciton-exciton interactions in GaAs by time-resolved optical reflectivity

Xu-Chen Nie; Hai-Yun Liu; Xiu Zhang; Cong-Ying Jiang; Shi-Zhong Zhao; Quan-Ping Zhao; Fan Li; Lili Yue; Jian-Qiao Meng; Yu-Xia Duan; Shi-Bing Liu

Results in Physics (Mar 2019)

Exciton-phonon and exciton-exciton interactions in GaAs by time-resolved optical reflectivity

Xu-Chen Nie,
Hai-Yun Liu,
Xiu Zhang,
Cong-Ying Jiang,
Shi-Zhong Zhao,
Quan-Ping Zhao,
Fan Li,
Lili Yue,
Jian-Qiao Meng,
Yu-Xia Duan,
Shi-Bing Liu

Affiliations

Xu-Chen Nie: Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
Hai-Yun Liu: Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China; Corresponding authors.
Xiu Zhang: Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
Cong-Ying Jiang: Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
Shi-Zhong Zhao: Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
Quan-Ping Zhao: Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
Fan Li: Department of Chemistry and Chemical Engineering, College of Environmental and Energy Engineering, Beijing University of Technology, Beijing 100124, China
Lili Yue: College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
Jian-Qiao Meng: Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China
Yu-Xia Duan: School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China
Shi-Bing Liu: Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China; Corresponding authors.

Journal volume & issue: Vol. 12
pp. 1089 – 1090

Abstract

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We present the study of the ultrafast carrier dynamics in bulk GaAs at 6 K, by time-resolved optical reflectivity in a wide range of excitation densities. We observe an exciton-phonon interaction at low excitation densities, in terms of a mono-exponential relaxation. Further increase of excitation density above a critical value nc, stimulates a bi-exponential relaxation in which the fast one is added owing to an exciton-exciton scattering channel. Our results reveal nc∼2×1024photons/m3, about an order of magnitude higher than the Mott density previously determined by photoluminescence and terahertz spectroscopy measurements and theoretical calculations. Keywords: Exciton, Semiconductor, Ultrafast pump-probe spectroscopy

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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