High-field spatial imaging of charge transport in silicon at low temperature

C. Stanford; R. A. Moffatt; N. A. Kurinsky; P. L. Brink; B. Cabrera; M. Cherry; F. Insulla; M. Kelsey; F. Ponce; K. Sundqvist; S. Yellin; B. A. Young

doi:10.1063/1.5131171

AIP Advances (Feb 2020)

High-field spatial imaging of charge transport in silicon at low temperature

C. Stanford,
R. A. Moffatt,
N. A. Kurinsky,
P. L. Brink,
B. Cabrera,
M. Cherry,
F. Insulla,
M. Kelsey,
F. Ponce,
K. Sundqvist,
S. Yellin,
B. A. Young

Affiliations

C. Stanford: Department of Physics, Stanford University, Stanford, California 94305, USA
R. A. Moffatt: Department of Physics, Stanford University, Stanford, California 94305, USA
N. A. Kurinsky: Fermi National Accelerator Laboratory, Center for Particle Astrophysics, Batavia, Illinois 60510, USA
P. L. Brink: SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USA
B. Cabrera: Department of Physics, Stanford University, Stanford, California 94305, USA
M. Cherry: SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USA
F. Insulla: Department of Physics, Stanford University, Stanford, California 94305, USA
M. Kelsey: SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USA
F. Ponce: Department of Physics, Stanford University, Stanford, California 94305, USA
K. Sundqvist: Department of Physics, San Diego State University, San Diego, California 92182, USA
S. Yellin: Department of Physics, Stanford University, Stanford, California 94305, USA
B. A. Young: Department of Physics, Santa Clara University, Santa Clara, California 95053, USA

DOI: https://doi.org/10.1063/1.5131171
Journal volume & issue: Vol. 10, no. 2
pp. 025316 – 025316-6

Abstract

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We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. We also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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