Nature Communications (Dec 2021)
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
- Ying Zhang,
- Ge-Qi Mao,
- Xiaolong Zhao,
- Yu Li,
- Meiyun Zhang,
- Zuheng Wu,
- Wei Wu,
- Huajun Sun,
- Yizhong Guo,
- Lihua Wang,
- Xumeng Zhang,
- Qi Liu,
- Hangbing Lv,
- Kan-Hao Xue,
- Guangwei Xu,
- Xiangshui Miao,
- Shibing Long,
- Ming Liu
Affiliations
- Ying Zhang
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Ge-Qi Mao
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology
- Xiaolong Zhao
- School of Microelectronics, University of Science and Technology of China
- Yu Li
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Meiyun Zhang
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Zuheng Wu
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Wei Wu
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology
- Huajun Sun
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology
- Yizhong Guo
- Institute of Microstructure and Property of Advanced Materials, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology
- Lihua Wang
- Institute of Microstructure and Property of Advanced Materials, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology
- Xumeng Zhang
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Qi Liu
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Hangbing Lv
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Kan-Hao Xue
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology
- Guangwei Xu
- School of Microelectronics, University of Science and Technology of China
- Xiangshui Miao
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology
- Shibing Long
- School of Microelectronics, University of Science and Technology of China
- Ming Liu
- Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-021-27575-z
- Journal volume & issue
-
Vol. 12,
no. 1
pp. 1 – 10
Abstract
Understanding the mechanism of the formation and rupture of conductive filaments in HfO2-based memristors is essential to solve the problem of scalability of the devices. Here, Zhang et al. visualize this process by tracking atomic-scale evolution of conductive filaments during resistive switching cycles.
