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APL Materials
(Aug 2020)
Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)]
A F M Anhar Uddin Bhuiyan,
Zixuan Feng,
Jared M. Johnson,
Hsien-Lien Huang,
Jith Sarker,
Menglin Zhu,
Md Rezaul Karim,
Baishakhi Mazumder,
Jinwoo Hwang,
Hongping Zhao
Affiliations
A F M Anhar Uddin Bhuiyan
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Zixuan Feng
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Jared M. Johnson
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Hsien-Lien Huang
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Jith Sarker
Department of Materials Design and Innovation, University at Buffalo, Buffalo, New York 14260, USA
Menglin Zhu
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Md Rezaul Karim
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Baishakhi Mazumder
Department of Materials Design and Innovation, University at Buffalo, Buffalo, New York 14260, USA
Jinwoo Hwang
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Hongping Zhao
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
DOI
https://doi.org/10.1063/5.0014806
Journal volume & issue
Vol. 8, no. 8
pp. 089102 – 089102-2
Abstract
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