Room temperature operation of single mode GaSb‐based DFB interband cascade lasers beyond 6.1 µm

Abstract

Abstract Single‐mode distributed feedback GaSb‐based interband cascade lasers with record emission beyond 6.1 µm are presented. The results are based on an epitaxial design with reduced resonant intersubband absorption in the valence band and rebalanced internally generated carriers. The epi‐down mounted 8 µm wide and 1 mm long laser chip is operated in continuous wave mode at room temperature and covers a bandwidth of over 20 nm with temperature and current tuning. At 25°C more than 4 mW of optical output power was measured.

Keywords

• infrared sources
• optoelectronic devices
• semiconductor lasers