Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Abstract

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

Keywords

• dilute bismide
• III-N-Bi
• III-P-Bi
• III-As-Bi
• III-Sb-Bi
• MBE
• MOCVD
• surfactant
• droplet
• bandgap reduction
• GaAsBi lasers
• In(Ga)AsBi detectors
• InSbBi detectors