Enabling Quick Response to Nitrogen Dioxide at Room Temperature and Limit of Detection to Ppb Level by Heavily n-Doped Graphene Hybrid Transistor

Abstract

Sensitive detection of nitrogen dioxide (NO2) is of significance in many areas for health and environmental protections. In this work, we developed an efficient NO2 sensor that can respond within seconds at room temperature, and the limit of detection (LOD) is as low as 100 ppb. Coating cyano-substituted poly(p-phenylene vinylene) (CN-PPV) films on graphene (G) layers can dope G sheets effectively to a heavy n state. The influences of solution concentrations and annealing temperatures on the n-doping effect were investigated in detail. The CN-PPV–G transistors fabricated with the optimized parameters demonstrate active sensing abilities toward NO2. The n-doping state of CN-PPV–G is reduced dramatically by NO2, which is a strong p-doping compound. Upon exposure to 25 ppm of NO2, our CN-PPV–G sensors react in 10 s, indicating it is almost an immediate response. LOD is determined as low as 100 ppb. The ultrahigh responding speed and low LOD are not affected in dry air. Furthermore, cycling use of our sensors can be realized through simple annealing. The superior features shown by our CN-PPV–G sensors are highly desired in the applications of monitoring the level of NO2 in situ and setting immediate alarms. Our results also suggest that transfer curves of transistors can react very promptly to the stimulus of target gas and, thus, are very promising in the development of fast-response sensing devices although the response values may not reach maximum as a tradeoff.

Keywords

• nitrogen dioxide
• graphene
• sensor
• field effect transistor
• poly(p-phenylene vinylene)