Nanomaterials (Oct 2023)

A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT

  • Jae-Hyeok Song,
  • Eun-Gyu Lee,
  • Jae-Eun Lee,
  • Jeong-Taek Son,
  • Joon-Hyung Kim,
  • Min-Seok Baek,
  • Choul-Young Kim

DOI
https://doi.org/10.3390/nano13202752
Journal volume & issue
Vol. 13, no. 20
p. 2752

Abstract

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In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits.

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