The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions

Abstract

In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs. Nanolayers of that compositions are using in creations of quantum well devices like avalanche photodiode, QWIPs and so on.This devices needs sharp heterojunctions. For this purpose we used numerical studies of momentum and mass transport equations. 3D model of mixer was built in COMSOL Multiphysics. Results shows three streams: two peripheral and wide central. The shape and behavior was found independent from studying pressure ranges. That leads to applications of such gas mixer for vertical reactors of MOCVD but not for horizontal reactors.

Keywords

• 3d model, mocvd, movpe, horizontal rector, gas mixer, inxga1-xas, numerical studying, heterojunctions