Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Abstract

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (9 cm−2) is much lower than that of TD (2–3 × 1010 cm−2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of point defects over TDs in QW efficiency. Interestingly, TD terminations lead to the formation of independent domains for carriers, thanks to V-pits and step bunching phenomena.

Keywords

• quantum well
• point defect
• threading dislocation
• photoluminescence
• cathodoluminescence
• electron microscopy